The LM324AN is a freestanding, high-gain, frequency-compensated op-amp
The LM324AN is a freestanding, high-gain, frequency-compensated op-amp
Product overview
The LM324AN is a freestanding quadruple frequency compensated high gain op-amp specifically designed to operate from a single source or a split source over a wide range of voltages.
Internal frequency compensation
Common mode input voltage range includes ground, allowing direct detection near ground
0.8mA Typical low drain current consumption independent of supply voltage
2 mV typical input offset voltage
2nA typical input offset current
15nA Typical input bias current
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The LM324AN is a freestanding, high-gain, frequency-compensated op-amp
Product overview
The LM324AN is a freestanding quadruple frequency compensated high gain op-amp specifically designed to operate from a single source or a split source over a wide range of voltages.
Internal frequency compensation
Common mode input voltage range includes ground, allowing direct detection near ground
0.8mA Typical low drain current consumption independent of supply voltage
2 mV typical input offset voltage
2nA typical input offset current
15nA Typical input bias current
Product overview
The LM324AN is a freestanding quadruple frequency compensated high gain op-amp specifically designed to operate from a single source or a split source over a wide range of voltages.
Internal frequency compensation
Common mode input voltage range includes ground, allowing direct detection near ground
0.8mA Typical low drain current consumption independent of supply voltage
2 mV typical input offset voltage
2nA typical input offset current
15nA Typical input bias current
Typical 100V / mV Open Circuit Differential Voltage Amplification
Applications
Consumer Electronics, Instrumentation and Measurement, Motor Control, Test and Measurement
Notes
Product 1523835 has a package size of 25 items.
Warnings
The device integrates limited protection against ESD discharge. Short-circuit the terminals were connected or the device was placed in conductive foam during storage or handling to avoid electrostatic discharge damage to the MOS gates.