The IR2110SPBF is a high-speed, high-voltage IGBT and MOSFET driver

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The IR2110SPBF is a high-speed, high-voltage IGBT and MOSFET driver

Product overview

The IR2110SPBF is a high-speed, high-voltage IGBT and MOSFET driver with independent output channels referenced to the high and low sides. Employs proprietary HVIC and interlaced immune CMOS technology that enables robust monolithic construction. The logic inputs support standard LSTTL or CMOS output and logic as low as 3.3V. The output driver features a high impulse current damping stage for minimal driver cross-conduction. Propagation delays are balanced to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power IGBT or MOSFET in the high-side configuration operating up to 500V / 600V.

Quantity

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The IR2110SPBF is a high-speed, high-voltage IGBT and MOSFET driver

Product overview

The IR2110SPBF is a high-speed, high-voltage IGBT and MOSFET driver with independent output channels referenced to the high and low sides. Employs proprietary HVIC and interlaced immune CMOS technology that enables robust monolithic construction. The logic inputs support standard LSTTL or CMOS output and logic as low as 3.3V. The output driver features a high impulse current damping stage for minimal driver cross-conduction. Propagation delays are balanced to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power IGBT or MOSFET in the high-side configuration operating up to 500V / 600V.

Product overview

The IR2110SPBF is a high-speed, high-voltage IGBT and MOSFET driver with independent output channels referenced to the high and low sides. Employs proprietary HVIC and interlaced immune CMOS technology that enables robust monolithic construction. The logic inputs support standard LSTTL or CMOS output and logic as low as 3.3V. The output driver features a high impulse current damping stage for minimal driver cross-conduction. Propagation delays are balanced to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power IGBT or MOSFET in the high-side configuration operating up to 500V / 600V.

     Tolerant to transient negative voltages with DV / DT immunity

     Undervoltage blocking for both channels.

     Schmitt CMOS-triggered inputs with skew resistance

     Trip logic triggered by edge cycle by cycle

     Balanced propagation delay for both channels.

Applications

Industrial, Consumer Electronics

IR2110S
10 Items