The FR120N is a 5th generation N channel power MOSFET
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The FR120N is a 5th generation N channel power MOSFET
Product overview
The FR120N is a HEXFET® fifth generation N-channel power MOSFET that uses advanced processing techniques to achieve extremely low ON resistance per silicon area. This benefit, combined with the fast switching speed and robust device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface mounting using vapor phase, infrared or solder wave techniques. The 1.5W power dissipation level is possible in a typical surface mount application.
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The FR120N is a 5th generation N channel power MOSFET
Product overview
The FR120N is a HEXFET® fifth generation N-channel power MOSFET that uses advanced processing techniques to achieve extremely low ON resistance per silicon area. This benefit, combined with the fast switching speed and robust device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface mounting using vapor phase, infrared or solder wave techniques. The 1.5W power dissipation level is possible in a typical surface mount application.
Advanced process technology
Full avalanche rating
Low static drain resistance to ON source
Product overview
The FR120N is a HEXFET® fifth generation N-channel power MOSFET that uses advanced processing techniques to achieve extremely low ON resistance per silicon area. This benefit, combined with the fast switching speed and robust device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface mounting using vapor phase, infrared or solder wave techniques. The 1.5W power dissipation level is possible in a typical surface mount application.
Advanced process technology
Full avalanche rating
Low static drain resistance to ON source
Dynamic rating dV / dt
Applications
Power Management
Warnings
Market demand for this product has extended manufacturing times, so delivery dates may fluctuate
FR120N
198 Items
The FR120N is a 5th generation N channel power MOSFET
Product overview
The FR120N is a HEXFET® fifth generation N-channel power MOSFET that uses advanced processing techniques to achieve extremely low ON resistance per silicon area. This benefit, combined with the fast switching speed and robust device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface mounting using vapor phase, infrared or solder wave techniques. The 1.5W power dissipation level is possible in a typical surface mount application.